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HiPerFET TM
Power MOSFETs
ISOPLUS247 TM , Q-Class
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, Low Q g , High dv/dt
IXFR 44N50Q
IXFR 48N50Q
V DSS I D25 R DS(on)
500 V 34 A 120 m ?
500 V 40 A 110 m ?
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
ISOPLUS 247 TM
E153432
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
500
500
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
Isolated backside*
I D25
I DM
T C = 25 ° C
T C = 25 ° C, Note 1
44N50Q
48N50Q
44N50Q
48N50Q
34
40
176
192
A
A
A
A
I AR
T C = 25 ° C
44N50Q
48N50Q
44
48
A
A
G = Gate
S = Source
D = Drain
E AR
E AS
dv/dt
P D
T J
T JM
T stg
T L
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
1.6 mm (0.063 in.) from case for 10 s
60
2.5
15
310
-55 ... +150
150
-55 ... +150
300
mJ
J
V/ns
W
° C
° C
° C
° C
* Patent pending
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
IXYS advanced low Q g process
Rugged polysilicon gate cell structure
V ISOL
Weight
50/60 Hz, RMS
t = 1 min
2500
5
V~
g
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic diode
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
DC-DC converters
Battery chargers
V DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 4 m A
V GS = ± 20 V, V DS = 0
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = I T
Notes 2, 3
T J = 125 ° C
44N50Q
48N50Q
500
2.0
V
4.0 V
± 100 nA
100 μ A
2 mA
120 m ?
110 m ?
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
? 2003 IXYS All rights reserved
DS98702D(08/03)
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